IRFW740BTM
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IRFW740BTM , fairchild semiconductor

Manufacturer: fairchild semiconductor
Mfr.Part #: IRFW740BTM
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Description:
N-CHANNEL POWER MOSFET
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Specifications
Product Attribute Attribute Value
Drain To Source Voltage (Vdss) 400 V
Vgs(Th) (Max) @ Id 4V @ 250µA
Mounting Type Surface Mount
Fet Type N-Channel
Vgs (Max) ±30V
Rds On (Max) @ Id, Vgs 540mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Fet Feature -
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 134W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
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