FQU2N60TU
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FQU2N60TU , fairchild semiconductor

Manufacturer: fairchild semiconductor
Mfr.Part #: FQU2N60TU
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MOSFET N-CH 600V 2A IPAK
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Specifications
Product Attribute Attribute Value
Drain To Source Voltage (Vdss) 600 V
Vgs(Th) (Max) @ Id 5V @ 250µA
Mounting Type Through Hole
Fet Type N-Channel
Vgs (Max) ±30V
Rds On (Max) @ Id, Vgs 4.7Ohm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Fet Feature -
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
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