FQI19N20TU
Payment:
Delivery:

FQI19N20TU , fairchild semiconductor

Manufacturer: fairchild semiconductor
Mfr.Part #: FQI19N20TU
Package:
RoHS:
Datasheet:

PDF For FQI19N20TU

ECAD:
Description:
MOSFET N-CH 200V 19.4A I2PAK
Request for Quotation In Stock: 442598
Warm Tips: Please fill out the below form and we will contact you as soon as possible.
*Quantity:
*Your Name:
*Email Address:
Phone:
Target Price:
Remark:
Send Inquiry
  • Product Details
  • Shopping Guide
  • FAQs
Specifications
Product Attribute Attribute Value
Drain To Source Voltage (Vdss) 200 V
Vgs(Th) (Max) @ Id 5V @ 250µA
Mounting Type Through Hole
Fet Type N-Channel
Vgs (Max) ±30V
Rds On (Max) @ Id, Vgs 150mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Fet Feature -
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 19.4A (Tc)
Related Products
11935977
415
/category/Semiconductors/Discrete-Semiconductors_415?proid=11935977&N=
$