I4818DY-T1-E3
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SI4818DY-T1-E3 , Vishay / Siliconix

Manufacturer: Vishay / Siliconix
Mfr.Part #: SI4818DY-T1-E3
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MOSFET 2N-CH 30V 5.3A 8-SOIC
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Specifications
Product Attribute Attribute Value
Current - Continuous Drain (Id) @ 25°C 5.3A, 7A
Rds On (Max) @ Id, Vgs 22mOhm @ 6.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1W, 1.25W
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain To Source Voltage (Vdss) 30V
Supplier Device Package 8-SOIC
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Fet Feature Logic Level Gate
Vgs(Th) (Max) @ Id 800mV @ 250µA (Min)
Operating Temperature -55°C ~ 150°C (TJ)
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