-ETF150Y65N
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VS-ETF150Y65N , Vishay Semiconductors

Manufacturer: Vishay Semiconductors
Mfr.Part #: VS-ETF150Y65N
Package: EMIPAK-2B
RoHS:
Datasheet:

PDF For VS-ETF150Y65N

Description:
IGBT Modules 650V Vces 150A Ic 3 Levels Half-Bridge
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Specifications
Product Attribute Attribute Value
Manufacturer Vishay
Product Category IGBT Modules
RoHS
Product IGBT Silicon Modules
Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount
Pd - Power Dissipation 600 W
Product Type IGBT Modules
Package / Case EMIPAK-2B
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.7 V
Maximum Operating Temperature + 175 C
Packaging Tube
Brand Vishay Semiconductors
Configuration Half Bridge
Continuous Collector Current At 25 C 201 A
Gate-Emitter Leakage Current 600 nA
Technology Si
Factory Pack Quantity 60
Subcategory IGBTs
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