-3C06ET07S2L-M3
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VS-3C06ET07S2L-M3 , Vishay General Semiconductor – Diodes Division

Manufacturer: Vishay General Semiconductor – Diodes Division
Mfr.Part #: VS-3C06ET07S2L-M3
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PDF For VS-3C06ET07S2L-M3

Description:
650 V POWER SIC GEN 3 MERGED PIN
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Specifications
Product Attribute Attribute Value
Capacitance @ Vr, F 255pF @ 1V, 1MHz
Mounting Type Surface Mount
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 6A
Speed No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 6 A
Reverse Recovery Time (Trr) 0 ns
Current - Reverse Leakage @ Vr 35 µA @ 650 V
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK)
Technology SiC (Silicon Carbide) Schottky
Voltage - Dc Reverse (Vr) (Max) 650 V
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