PH3208PD
Payment:
Delivery:

TPH3208PD , Transphorm

Manufacturer: Transphorm
Mfr.Part #: TPH3208PD
Package:
RoHS:
Datasheet:

PDF For TPH3208PD

Description:
GANFET N-CH 650V 20A TO220AB
Request for Quotation In Stock: 168651
Warm Tips: Please fill out the below form and we will contact you as soon as possible.
*Quantity:
*Your Name:
*Email Address:
Phone:
Target Price:
Remark:
Send Inquiry
  • Product Details
  • Shopping Guide
  • FAQs
Specifications
Product Attribute Attribute Value
Mounting Type Through Hole
Supplier Device Package TO-220AB
Drain To Source Voltage (Vdss) 650 V
Rds On (Max) @ Id, Vgs 130mOhm @ 13A, 8V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
Power Dissipation (Max) 96W (Tc)
Fet Type N-Channel
Technology GaNFET (Gallium Nitride)
Vgs (Max) ±18V
Fet Feature -
Vgs(Th) (Max) @ Id 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 8 V
Operating Temperature -55°C ~ 150°C
Package / Case TO-220-3
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Related Products
11953453
415
/category/Semiconductors/Discrete-Semiconductors_415?proid=11953453&N=
$