BSM180C12P3C202
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BSM180C12P3C202 , ROHM Semiconductor

Manufacturer: ROHM Semiconductor
Mfr.Part #: BSM180C12P3C202
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PDF For BSM180C12P3C202

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Description:
SICFET N-CH 1200V 180A MODULE
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Specifications
Product Attribute Attribute Value
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs -
Vgs (Max) +22V, -4V
Operating Temperature -40°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 10 V
Fet Feature -
Power Dissipation (Max) 880W (Tc)
Supplier Device Package Module
Fet Type N-Channel
Drain To Source Voltage (Vdss) 1200 V
Vgs(Th) (Max) @ Id 5.6V @ 50mA
Package / Case Module
Technology SiCFET (Silicon Carbide)
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