PP60R750E6XKSA1
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IPP60R750E6XKSA1 , Infineon Technologies

Manufacturer: Infineon Technologies
Mfr.Part #: IPP60R750E6XKSA1
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MOSFET N-CH 600V 5.7A TO220-3
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Specifications
Product Attribute Attribute Value
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Drain To Source Voltage (Vdss) 600 V
Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 373 pF @ 100 V
Power Dissipation (Max) 48W (Tc)
Fet Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Fet Feature -
Vgs(Th) (Max) @ Id 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-220-3
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
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